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Results 1 to 13 of 13

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BEVEL CROSS SECTIONING OF ULTRA-THIN (100 A) III-V SEMI CONDUCTOR LAYERSHOLONYAK N; VOJAK BA; KOLBAS RM et al.1979; SOLID STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 4; PP. 431-433; BIBL. 8 REF.Article

ROOM-TEMPERATURE CONTINUOUS OPERATION OF PHOTOPUMPED MO-CVD ALXGA1-X AS-GAAS-ALX GA1-X AS QUANTUM-WELL LASERSHOLONYAK N JR; KOLBAS RM; DUPUIS RD et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 73-75; BIBL. 17 REF.Article

CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD; HOLONYAK N JR et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 487-489; BIBL. 25 REF.Article

QUANTUM-WELL HETEROSTRUCTURE LASERSHOLONYAK N JR; KOLBAS RM; DUPUIS RD et al.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 2; PP. 170-186; BIBL. 56 REF.Article

DETERMINATION OF THE INDIRECT BAND EDGE OF GAAS BY QUANTUM WELL BANDFILLING (L2 EQUIV. A 100 A)DUPUIS RD; DAPKUS PD; KOLBAS RM et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 5; PP. 531-533; BIBL. 15 REF.Article

PHONON-ASSISTED RECOMBINATION AND STIMULATED EMISSION IN QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURESHOLONYAK N JR; KOLBAS RM; LAIDIG WD et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1328-1337; BIBL. 39 REF.Article

CARRIER COLLECTION IN A SEMICONDUCTOR QUANTUM WELLSHICHIJO H; KOLBAS RM; HOLONYAK N JR et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 10; PP. 1029-1032; BIBL. 15 REF.Article

LOW-THRESHHOLD CONTINUOUS LASER OPERATION (300-337OK) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURESHOLONYAK N; KOLBAS RM; LAIDIG WD et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 8; PP. 737-739; BIBL. 9 REF.Article

PHONON-ASSISTED RECOMBINATION IN A MULTIPLE-QUANTUM-WELL LPE INP-IN1-XGAXP1-2AS2 HETEROSTRUCTURE LASERREZEK EA; CHIN R; HOLONYAK N JR et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 1; PP. 45-47; BIBL. 9 REF.Article

QUANTUM-WELL INP-IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASERS GROWN BY LIQUID PHASE EPITAXY (LPE)REZEK EA; CHIN R; HOLONYAK N JR et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 1; PP. 1-27; BIBL. 29 REF.Article

PHONON-ASSISTED RECOMBINATION AND STIMULATED EMISSION IN MULTIPLE QUANTUM-WELL MO-CVD ALXGA1-XAS-GAASKOLBAS RM; HOLONYAK N; VOJAK BA et al.1979; SOLID STATE COMMUNIC.; ISSN 0038-1098; USA; DA. 1979; VOL. 31; NO 12; PP. 1033-1037; BIBL. 17 REF.Article

PHONON-SIDEBAND MO-CVD QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERHOLONYAK N JR; KOLBAS RM; LAIDIG WD et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 8; PP. 502-505; BIBL. 16 REF.Article

BANDFILLING IN METALORGANIC CHEMICAL VAPOR DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-X AS QUANTUM-WELL HETEROSTRUCTURE LASERSHOLONYAK N JR; KOLBAS RM; REZERK EA et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 11; PP. 5392-5397; BIBL. 20 REF.Article

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